Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides
CMOS inverter based on n-type MoS 2 and p-type WSe 2 FETs. a Schematic... | Download Scientific Diagram
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Electrical properties of the TMD inverter. (a) Voltage transfer... | Download Scientific Diagram
Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics | Accounts of Materials Research
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High-Performance MoS2 Complementary Inverter Prepared by Oxygen Plasma Doping | ACS Applied Electronic Materials
Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides | npj 2D Materials and Applications
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Electrical properties of the TMD inverter. (a) Voltage transfer... | Download Scientific Diagram
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Electrical properties of the TMD inverter. (a) Voltage transfer... | Download Scientific Diagram
/s3.gy.digital%2Fskrekis%2Fuploads%2Fasset%2Fdata%2F34909%2F4545000.jpg "BREAKER XT1N 160 TMD 100-1000 3P F F - Skrekis")
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Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits - Nanoscale (RSC Publishing) DOI:10.1039/C9NR03441B
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